MOSFET N/P-CH 25V SC70-6 FDG6322C
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Description:
MOSFET N/P-CH 25V SC70-6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
FDG6322C(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25447,Price reference "real-time change" China/Hongkong。 FDG6322C package/specs, Download FDG6322C、Datasheet。